Description
MOSFET N-CH 100V 60A PPAK SO-8 Series: TrenchFET? Amplifier Type: -55°C ~ 150°C (TJ) Applications: Surface Mount Capacitance: PowerPAK? SO-8
Part Number | SIR804DP-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 100V 60A PPAK SO-8 |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 76nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2450pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
Rds On (Max) @ Id, Vgs | 7.2 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image |
SIR804DP-T1-GE3
Vishay Thin Film
10711
0.7
CIS Ltd (CHECK IC SOLUTION LIMITED)
SIR804DP-T1-GE3
VISH
3500
2.1425
Hongkong Rixin International Trading Company
SIR804DPT1GE3
Vishay / BC Components
550
3.585
FLOWER GROUP(HK)CO.,LTD
SIR804DP-T1-GE3
VISHAY GENERAL
5565
5.0275
Ande Electronics Co., Limited
SIR804DP-T1-GE3
Vishay Siliconix
18000
6.47
MY Group (Asia) Limited