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Part Number | SIR802DP-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 20V 30A PPAK SO-8 |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1785pF @ 10V |
Vgs (Max) | ±12V |
FET Feature | - |
Power Dissipation (Max) | 4.6W (Ta), 27.7W (Tc) |
Rds On (Max) @ Id, Vgs | 5 mOhm @ 10A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image | ![]() |
SIR802DP-T1-GE3
Vishay Thin Film
15000
0.77
MY Group (Asia) Limited
SIR802DP-T1-GE3
VISH
2938
1.48
HK HEQING ELECTRONICS LIMITED
SIR802DP-T1-GE3
Vishay / BC Components
8622
2.19
ATLANTIC TECHNOLOGY LIMITED
SIR802DP-T1-GE3
VISHAY GENERAL
4547
2.9
CIS Ltd (CHECK IC SOLUTION LIMITED)
SIR802DP-T1-GE3
Vishay Siliconix
30171
3.61
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED