Part Number | SIR808DP-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 25V 20A POWERPAK |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 22.8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 815pF @ 12.5V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 29.8W (Tc) |
Rds On (Max) @ Id, Vgs | 8.9 mOhm @ 17A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | 8-PowerTDFN |
Image |
SIR808DP-T1-GE3
Vishay Thin Film
953
0.52
Gallop Great Holdings (Hong Kong) Limited
SIR808DP-T1-GE3
VISH
2985
1.515
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SIR808DP-T1-GE3
Vishay / BC Components
9197
2.51
King-Pai Technology (HK) Co.,Limited
SIR808DP-T1-GE3
VISHAY GENERAL
4992
3.505
Dan-Mar Components Inc.
SIR808DP-T1-GE3
Vishay Siliconix
8352
4.5
Rainstar Components USA Incorporated Limited