Part Number | SIJ478DP-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 80V 60A PPAK SO-8 |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 54nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1855pF @ 40V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 5W (Ta), 62.5W (Tc) |
Rds On (Max) @ Id, Vgs | 8 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image |
SiJ478DP-T1-GE3
Vishay Thin Film
35200
0.47
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SIJ478DP-T1-GE3
VISH
7409
1.7675
Viassion Technology Co., Limited
SIJ478DP-T1-GE3
Vishay / BC Components
18000
3.065
MY Group (Asia) Limited
SIJ478DP-T1-GE3
VISHAY GENERAL
2000
4.3625
Yingxinyuan INT'L (Group) Limited
SIJ478DPT1GE3
Vishay Siliconix
17000
5.66
N&S Electronic Co., Limited