Part Number | SIJ494DP-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 150V 36.8A SO8 |
Series | ThunderFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25°C | 36.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1070pF @ 75V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 69.4W (Tc) |
Rds On (Max) @ Id, Vgs | 23.2 mOhm @ 15A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image |
SiJ494DP-T1-GE3
Vishay Thin Film
35200
1.5
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SIJ494DP-T1-GE3
VISH
8309
2.235
Viassion Technology Co., Limited
SIJ494DP-T1-GE3
Vishay / BC Components
14100
2.97
CIS Ltd (CHECK IC SOLUTION LIMITED)
SIJ494DP-T1-GE3
VISHAY GENERAL
21100
3.705
N&S Electronic Co., Limited
SIJ494DP-T1-GE3
Vishay Siliconix
3250
4.44
RX ELECTRONICS LIMITED