Part Number | SIJ462DP-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 60V 46.5A PPAK SO-8 |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 46.5A(Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 30V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | - |
Rds On (Max) @ Id, Vgs | 8 mOhm @ 20A, 10V |
Operating Temperature | - |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image |
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