Part Number | SIR800DP-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 20V 50A PPAK SO-8 |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 133nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5125pF @ 10V |
Vgs (Max) | ±12V |
FET Feature | - |
Power Dissipation (Max) | 5.2W (Ta), 69W (Tc) |
Rds On (Max) @ Id, Vgs | 2.3 mOhm @ 15A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image |
SiR800DP-T1-GE3
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HK HEQING ELECTRONICS LIMITED
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Gallop Great Holdings (Hong Kong) Limited
SIR800DP-T1-GE3 MOS()
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