Part Number | SIR418DP-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 40V 40A PPAK SO-8 |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 75nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2410pF @ 20V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 39W (Tc) |
Rds On (Max) @ Id, Vgs | 5 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image |
SIR418DP-T1-GE3
Vishay Thin Film
3311
1.48
Gallop Great Holdings (Hong Kong) Limited
SIR418DP-T1-GE3
VISH
35800
2.1175
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SiR418DP-T1-GE3
Vishay / BC Components
50000
2.755
Hong Kong Yingweida Electronics Co., Ltd.
SiR418DP-T1-GE3
VISHAY GENERAL
3287
3.3925
Belt (HK) Electronics Co
SiR418DP-T1-GE3
Vishay Siliconix
4868000
4.03
Shenzhen WTX Capacitor Co., Ltd.