Vishay

Description

SPICE Device Model SiR422DP www.vishay.com. Vishay Siliconix. S13-1169- Rev. B, 20-May-13. 1. Document Number: 65240. THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND 22uH. Inductor, SMT Power, 8.6Asat, 2.05 milliohm. 1.100 x 1.100 inch SER2915H-223KL Coilcraft. 1. Q3. SiR836DP. MOSFET, N-ch, 40V, 8.5A, 22.5- milliohm. PWRPAK S0-8. SiR836DP. Vishay. 1. Q5. SiR422DP . MOSFET, N-ch, 40V, 16A, Oct 2, 2012 TG2. 17. BOOST2. 18. BG2. 19. EXTVCC. 20. INTVCC. 21. VIN. 22. PGND1. 24. BOOST1. 25. SW1. 27. PGOOD. 28. TG1. 26. BG1. 23. C14. 0.1uF. C14. 0.1uF. D4. DFLS160. D4. DFLS160. 2. 1. Q4. SiR422DP . Q4. SiR422DP . 226k. 0603. 0.1%. C12. 0.033 F. RCBRB1. 0.002. 1W. 2512. RCBRT1. 0.002. 1W. 2512. M4. SiR664DP. M2. SiR664DP. L1. 5.6 H. W RTH 7443556560. M3. SiR422DP . M5. SiR422DP . D6. B360A. C19. 0.22 F. 25V. 0603. C20. 0.22 F. 25V. 4 LiFePO4 2.9 0.22A . 1.37M. 14.7k. 26.7k. 10k. RNTC. 4-CELL. LiFePO4. BATTERY. PACK. NTHS0603. N02N1002J. Q2: SiR422DP . Q3: SiR496DP. Q4: SiR422DP .