Part Number | SIJ458DP-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 30V 60A PPAK SO-8 |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 122nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4810pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 5W (Ta), 69.4W (Tc) |
Rds On (Max) @ Id, Vgs | 2.2 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image |
SIJ458DP-T1-GE3
Vishay Thin Film
1000
1.32
MY Group (Asia) Limited
SIJ458DP-T1-GE3
VISH
18000
2.2825
MASSTOCK ELECTRONICS LIMITED
SIJ458DP-T1-GE3
Vishay / BC Components
2200
3.245
JM COMPONENTS LIMITED
SIJ458DP-T1-GE3
VISHAY GENERAL
500
4.2075
Sino Star Electronics (HK) Co.,Limited
SIJ458DP-T1-E3
Vishay Siliconix
4000
5.17
CIS Ltd (CHECK IC SOLUTION LIMITED)