Part Number | SIHH11N65E-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CHAN 650V 12A POWERPAK |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 68nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1257pF @ 100V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 130W (Tc) |
Rds On (Max) @ Id, Vgs | 363 mOhm @ 6A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK 8 x 8 |
Package / Case | 8-PowerTDFN |
Image |
SIHH11N65E-T1-GE3
Vishay Thin Film
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MY Group (Asia) Limited
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50
1.42
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4.75
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