Part Number | SIHH11N65EF-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CHAN 600V 24A POWERPAK |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1243pF @ 100V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 130W (Tc) |
Rds On (Max) @ Id, Vgs | 382 mOhm @ 6A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK 8 x 8 |
Package / Case | 8-PowerTDFN |
Image |
SIHH11N65EF-T1-GE3
Vishay Thin Film
18000
1.56
MY Group (Asia) Limited
SIHH11N65EF-T1-GE3
VISH
50
2.3375
Takson Electronics (H.K.) Co., Ltd.
SIHH11N65EF-T1-GE3
Vishay / BC Components
50
3.115
C-March Electronics Co.,Ltd
SIHH11N60EF-T1-GE3
VISHAY GENERAL
900
3.8925
MY Group (Asia) Limited
SIHH11N60EF-T1-GE3
Vishay Siliconix
50
4.67
Takson Electronics (H.K.) Co., Ltd.