Description
MOSFET N/P-CH 20V 4.4A 1206-8 Series: TrenchFET? FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 4.4A, 3A Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250米A Gate Charge (Qg) @ Vgs: 7.5nC @ 4.5V Input Capacitance (Ciss) @ Vds: - Power - Max: 1.1W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?
Part Number | SI5515DC-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Vishay |
Description | MOSFET N/P-CH 20V 4.4A 1206-8 |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 4.4A, 3A |
Rds On (Max) @ Id, Vgs | 40 mOhm @ 4.4A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1.1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SMD, Flat Lead |
Supplier Device Package | 1206-8 ChipFET |
Image |
SI5515DC-T1-GE3
Vishay Thin Film
976
0.3
RX ELECTRONICS LIMITED
SI5515DC-T1-GE3
VISH
5000000
0.8025
Hongkong Shengshi Electronics Limited
SI5515DC-T1-GE3
Vishay / BC Components
60000
1.305
Bonase Electronics (HK) Co., Limited
SI5515DC-T1-GE3
VISHAY GENERAL
99899
1.8075
Shinever Technology Limited
SI5515DC-T1-GE3
Vishay Siliconix
2299
2.31
Dan-Mar Components Inc.