Part Number | SI5515CDCT1GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Vishay |
Description | MOSFET N/P-CH 20V 4A 1206-8 |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 4A |
Rds On (Max) @ Id, Vgs | 36 mOhm @ 6A, 4.5V |
Vgs(th) (Max) @ Id | 800mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 11.3nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 632pF @ 10V |
Power - Max | 3.1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SMD, Flat Lead |
Supplier Device Package | 1206-8 ChipFET |
Image |
Hot Offer
SI5515CDC-T1-GE3
Vishay Siliconix
2270
2.94
Xiefeng (HK) INT'L Electronics Limited
SI5515CDC-T1-GE3
Vishay Thin Film
4544
0.23
Viassion Technology Co., Limited
SI5515CDC-T1-GE3
VISH
11050
0.9075
N&S Electronic Co., Limited
SI5515CDC-T1-GE3
Vishay / BC Components
300
1.585
Semic Pte. Ltd
SI5515CDCT1GE3
VISHAY GENERAL
17000
2.2625
CIS Ltd (CHECK IC SOLUTION LIMITED)