Description
MOSFET N/P-CH 20V 4A 1206-8 Series: TrenchFET? FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 4A Rds On (Max) @ Id, Vgs: 36 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250米A Gate Charge (Qg) @ Vgs: 11.3nC @ 5V Input Capacitance (Ciss) @ Vds: 632pF @ 10V Power - Max: 3.1W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?
Part Number | SI5515CDC-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Vishay |
Description | MOSFET N/P-CH 20V 4A 1206-8 |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
Rds On (Max) @ Id, Vgs | 36 mOhm @ 6A, 4.5V |
Vgs(th) (Max) @ Id | 800mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 11.3nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 632pF @ 10V |
Power - Max | 3.1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SMD, Flat Lead |
Supplier Device Package | - |
Image |
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