(4/5) based on 5 customer reviews
Description
MOSFET N/P-CH 20V 2A 6-TSOP Series: TrenchFET? FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25～C: 2A, 1.5A Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250米A (Min) Gate Charge (Qg) @ Vgs: 3.2nC @ 4.5V Input Capacitance (Ciss) @ Vds: - Power - Max: 830mW Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP
| Part Number | SI3585DV-T1-E3 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Vishay |
| Description | MOSFET N/P-CH 20V 2A 6-TSOP |
| Series | TrenchFET |
| Packaging | |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2A, 1.5A |
| Rds On (Max) @ Id, Vgs | 125 mOhm @ 2.4A, 4.5V |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
| Gate Charge (Qg) (Max) @ Vgs | 3.2nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 830mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | 6-TSOP |
| Image |  |
SI3585DV-T1-E3
Vishay Thin Film
3332
0.4
HK HEQING ELECTRONICS LIMITED
SI3585DV-T1-E3
VISH
1830
1.4625
Gallop Great Holdings (Hong Kong) Limited
SI3585DV-T1-E3
Vishay / BC Components
55200
2.525
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SI3585DV-T1-E3
VISHAY GENERAL
4868000
3.5875
Shenzhen WTX Capacitor Co., Ltd.
SI3585DV-T1-E3
Vishay Siliconix
18000
4.65
Nosin (HK) Electronics Co.
