Description
MOSFET N/P-CH 20V 2.9A 6TSOP Series: TrenchFET? FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 2.9A, 2.1A Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250米A Gate Charge (Qg) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) @ Vds: - Power - Max: 830mW Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP
Part Number | SI3586DV-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Vishay |
Description | MOSFET N/P-CH 20V 2.9A 6TSOP |
Series | TrenchFET |
Packaging | |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 2.9A, 2.1A |
Rds On (Max) @ Id, Vgs | 60 mOhm @ 3.4A, 4.5V |
Vgs(th) (Max) @ Id | 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 830mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package | 6-TSOP |
Image |
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