Part Number | SI1058X-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 20V SC89 |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1.55V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 5.9nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 236mW (Ta) |
Rds On (Max) @ Id, Vgs | 91 mOhm @ 1.3A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SC-89-6 |
Package / Case | SOT-563, SOT-666 |
Image |
SI1058X-T1-GE3
Vishay Thin Film
7790
1.83
Bonase Electronics (HK) Co., Limited
SI1058X-T1-GE3
VISH
4131
2.755
HK HEQING ELECTRONICS LIMITED
SI1058X-T1-GE3
Vishay / BC Components
193
3.68
CIS Ltd (CHECK IC SOLUTION LIMITED)
Si1058X-T1-GE3
VISHAY GENERAL
9110
4.605
Cicotex Electronics (HK) Limited
SI1058X-T1-GE3
Vishay Siliconix
5279
5.53
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED