Part Number | SI1056X-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 20V 1.32A SOT563F |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8.7nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 236mW (Ta) |
Rds On (Max) @ Id, Vgs | 89 mOhm @ 1.32A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SC-89-6 |
Package / Case | SOT-563, SOT-666 |
Image |
SI1056X-T1-E3
Vishay Thin Film
5590
0.6
AIC Semiconductor Co., Limited
SI1056X-T1-E3
VISH
2533
1.4775
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI1056X-T1-E3
Vishay / BC Components
9782
2.355
ATLANTIC TECHNOLOGY LIMITED
SI1056X-T1-E3
VISHAY GENERAL
5558
3.2325
Gallop Great Holdings (Hong Kong) Limited
SI1056X-T1-E3
Vishay Siliconix
9593
4.11
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED