Part Number | SI1058XT1E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 20V 1.3A SOT563F |
Series | TrenchFET |
Packaging | Digi-Reel |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1.55V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 5.9nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 236mW (Ta) |
Rds On (Max) @ Id, Vgs | 91 mOhm @ 1.3A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SC-89-6 |
Package / Case | SOT-563, SOT-666 |
Image |
SI1058X-T1-E3
Vishay Thin Film
1000
0.37
MY Group (Asia) Limited
SI1058X-T1-GE3
VISH
1020
1.4675
Ande Electronics Co., Limited
SI1058X-T1-GE3
Vishay / BC Components
900
2.565
Signal (HK) Electronic Technology Co., Limited
SI1058X-T1-GE3
VISHAY GENERAL
2312
3.6625
Bonase Electronics (HK) Co., Limited
SI1058X-T1-GE3
Vishay Siliconix
1000
4.76
MY Group (Asia) Limited