Part Number | SI1054X-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 12V 1.32A SC89-6 |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8.57nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 480pF @ 6V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 236mW (Ta) |
Rds On (Max) @ Id, Vgs | 95 mOhm @ 1.32A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SC-89-6 |
Package / Case | SOT-563, SOT-666 |
Image |
SI1054X-T1-GE3
Vishay Thin Film
723200
0.13
IC Chip Co., Ltd.
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VISH
1000
1.145
MY Group (Asia) Limited
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Vishay / BC Components
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Heisener Electronics Limited
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3.175
FLOWER GROUP(HK)CO.,LTD
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ASIAWAY (H.K.) LIMITED