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Description
IRFZ24 , SiHFZ24 www.vishay.com. Vishay Siliconix. S16-0013-Rev. C, 18-Jan- 16. 1. Document Number: 91406. For technical questions, contact: hvm@vishay. Sep 13, 1999 Page 1. HEXFET Power MOSFET. IRFZ24N. Fifth Generation HEXFET power MOSFETs from. International Rectifier utilize advanced Jan 18, 2016 Pulse width 300 s; duty cycle 2 %. c. Uses IRFZ24 /SiHFZ24 data and test conditions. THERMAL RESISTANCE RATINGS. PARAMETER. Power bus switching. Solenoid and motion control. Lamp control. Typical Applications. On. Off. VS. CTL. G. GND. MIC5018. 4.7 F. IRFZ24 *. N-Channel. International Rectifier. IRFZ24 . Table 1. UCC3981 evaluation board list of materials. Note: UCC3981 is also the UCC3831. UCC39811 was formerly UCC38531.
| Part Number | IRFZ24 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Vishay |
| Description | MOSFET N-CH 60V 17A TO-220AB |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 640pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 10A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
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