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Description
Datasheet Document Number: 91340 www.vishay.com. S10-1682-Rev. A, 26-Jul-10. 1. Power MOSFET. IRFZ20 , SiHFZ20. Vishay Siliconix. FEATURES. Extremely Low Document Number: 90708 www.vishay.com. Revision: 29-Oct-10. 1. R-C Thermal Model Parameters. IRFZ20_RC, SiHFZ20_RC. Vishay Siliconix. Application Note AN-940. How P-Channel MOSFETs Can Simplify Your Circuit. Table of Contents. Page. 1. Basic Characteristics of P-Channel HEXFET Power IRFZ44N. HEXFET Power MOSFET. 01/03/01. Parameter. Typ. Max. Units. R JC. Junction-to-Case. . 1.5. R CS. Case-to-Sink, Flat, Greased Surface. 0.50. Sub-circuit for IRFZ20 . .SUBCKT PWRMOS 1 2 3. . LG 2 4 0.7500E-08. LS 12 3 0.7500E-08. LD 6 1 0.4500E-08. . RG 4 5 0.1000E+02. RS 9 12 0.4000E-
| Part Number | IRFZ20 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Vishay |
| Description | MOSFET N-CH 50V 15A TO-220AB |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 850pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 10A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
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