(4/5) based on 12 customer reviews
Description
IRFPG50 , SiHFPG50. Vishay Siliconix. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; Oct 29, 1997 PD - 9.543C. IRFPG50 . HEXFET Power MOSFET www.irf.com. 1. Page 2. 2 www.irf.com. IRFPG50 . Page 3. www.irf.com. 3. IRFPG50 Page 1. Document Number: 90521 www.vishay.com. Revision: 09-Jul-10. 1. R-C Thermal Model Parameters. IRFPG50_RC, SiHFPG50_RC. Vishay Siliconix. 78. 125. IRFPG50 . 1000. 20. 2. 6.1. 190. 190. IRFPG40. 1000. 20. 3.5. 4.3. 120. 150. IRFPG30. 1000. 20. 5. 3.1. 80. 125. FULLPAK220. IRFIZ48G. 60. 20. 0.018. Page 1. Document Number: 91243 www.vishay.com. S11-0443-Rev. B, 14-Mar- 11. 1. This datasheet is subject to change without notice. THE PRODUCT
| Part Number | IRFPG50 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Vishay |
| Description | MOSFET N-CH 1000V 6.1A TO-247AC |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25°C | 6.1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 190nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Rds On (Max) @ Id, Vgs | 2 Ohm @ 3.6A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
| Image |  |
IRFPG50
Vishay Thin Film
3000
1.69
GOTSSON TECHNOLOGY (HONG KONG) CO., LIMITED
IRFPG50
VISH
30
2.665
FLOWER GROUP(HK)CO.,LTD
IRFPG50
Vishay / BC Components
300
3.64
Belt (HK) Electronics Co
IRFPG50
VISHAY GENERAL
100
4.615
Antony Electronic Ltd.
IRFPG50
Vishay Siliconix
560
5.59
WIN AND WIN ELECTRONICS LIMITED
