Description
Lead (Pb)-free. IRFPG40PbF . SiHFPG40-E3. SnPb. IRFPG40. SiHFPG40. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted). PARAMETER. IRFPG50PBF. 1000. 2000. 6.1. 3.9. 126.7. 73.3. 0.65. 190. IRFPG40. 1000. 3500. 4.3. 2.7. 80. 43.3. 0.83. 150. IRFPG40PBF . 1000. 3500. 4.3. 2.7. 80. 43.3. 0.83. IRFPG40PBF . 1000. 3500. 4.3. 2.7. 80. 43.3. 0.83. 150. IRFPG50PBF. 1000. 2000. 6.1. 3.9. 126.7. 73.3. 0.65. 190. SIHG20N50C-E3. 500. 270. 20. 11. 65. 29. 0.5.
Part Number | IRFPG40PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 1000V 4.3A TO-247AC |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 120nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1600pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 150W (Tc) |
Rds On (Max) @ Id, Vgs | 3.5 Ohm @ 2.6A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-3 |
Package / Case | TO-247-3 |
Image |
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