(4/5) based on 2 customer reviews
Description
DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low Jan 24, 2001 VGS. Gate-to-Source Voltage. 20. V. EAS. Single Pulse Avalanche Energy . 5.7. mJ. IAR. Avalanche Current . 10. A. EAR. Repetitive Rth(JC). PD (W). @ TC = 25. C. IRFP350PBF. 400. 400. 16. 10. 100. 53.3. 0.65. 190. IRFP340 . 400. 550. 11. 6.9. 41.3. 20. 0.83. 150. IRFP340PBF. 400. 550. 11.
| Part Number | IRFP340 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Vishay |
| Description | MOSFET N-CH 400V 11A TO-247AC |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 400V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Rds On (Max) @ Id, Vgs | 550 mOhm @ 6.6A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
| Image |  |
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