(5/5) based on 14 customer reviews
Description
SiHFP32N50K-E3. SnPb. IRFP32N50K . SiHFP32N50K. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. IRFP32N50K . 10/19/04 www.irf.com. 1. SMPS MOSFET. HEXFET. . Power MOSFET. VDSS. RDS(on)typ. ID. 500V. 0.135 . 32A. Parameter. Max. Units. For example, consider the 500 V/32 A device as excerpted from the datasheet below,. Fig. 17 - IRFP32N50K , SiHFP32N50K Datasheet Excerptions. Ipk. VAV. DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low IRFP32N50K . Power MosFET. 500V, Rds(on) = 160 m . TH / Radial. TO-247. IRFPS40N60K. Power MOSFET. 600V, Rds(on) = 130 m . TH / Radial. Super TO -
| Part Number | IRFP32N50K |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Vishay |
| Description | MOSFET N-CH 500V 32A TO-247AC |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 190nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 5280pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 460W (Tc) |
| Rds On (Max) @ Id, Vgs | 160 mOhm @ 32A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
| Image |  |
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