(4/5) based on 18 customer reviews
Description
DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low Jan 24, 2001 VGS. Gate-to-Source Voltage. 20. V. EAS. Single Pulse Avalanche Energy . 5.7. mJ. IAR. Avalanche Current . 10. A. EAR. Repetitive Rth(JC). PD (W). @ TC = 25. C. IRFP350PBF. 400. 400. 16. 10. 100. 53.3. 0.65. 190. IRFP340 . 400. 550. 11. 6.9. 41.3. 20. 0.83. 150. IRFP340PBF. 400. 550. 11.
| Part Number | IRFP340 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Vishay |
| Description | MOSFET N-CH 400V 11A TO-247AC |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 400V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Rds On (Max) @ Id, Vgs | 550 mOhm @ 6.6A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
| Image |  |
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