Description
SiHFP32N50K-E3. SnPb. IRFP32N50K . SiHFP32N50K. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. IRFP32N50K . 10/19/04 www.irf.com. 1. SMPS MOSFET. HEXFET. . Power MOSFET. VDSS. RDS(on)typ. ID. 500V. 0.135 . 32A. Parameter. Max. Units. For example, consider the 500 V/32 A device as excerpted from the datasheet below,. Fig. 17 - IRFP32N50K , SiHFP32N50K Datasheet Excerptions. Ipk. VAV. DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low IRFP32N50K . Power MosFET. 500V, Rds(on) = 160 m . TH / Radial. TO-247. IRFPS40N60K. Power MOSFET. 600V, Rds(on) = 130 m . TH / Radial. Super TO -
Part Number | IRFP32N50K |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 500V 32A TO-247AC |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 190nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5280pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 460W (Tc) |
Rds On (Max) @ Id, Vgs | 160 mOhm @ 32A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-3 |
Package / Case | TO-247-3 |
Image |
IRFP32N50K
Vishay Thin Film
8000
0.22
Ysx Tech Co., Limited
IRFP32N50K
VISH
1000
1.315
MY Group (Asia) Limited
IRFP32N50K
Vishay / BC Components
5272
2.41
E-Core Electronics Co.
IRFP32N50K
VISHAY GENERAL
558
3.505
WIN AND WIN ELECTRONICS LIMITED
IRFP32N50K
Vishay Siliconix
24995
4.6
Cicotex Electronics (HK) Limited