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Description
IRF840 . SiHF840. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. UNIT. Drain-Source Voltage. VDS. IRF440-443/ IRF840 -843. MTM7N45/7N50. N-Channel Power MOSFETs. 8A, 450V/500V www.artschip.com. 1. Description. These devices are n-channel, DESCRIPTION. The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Jun 16, 2016 IRF840 . N-Channel. Enhancement Mode. Field Effect Transistor. Features. Maximum Ratings @ 25OC Unless Otherwise Specified. Symbol. DESCRIPTION. This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power. MOSFETs. Utilizing the new
| Part Number | IRF840 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Vishay |
| Description | MOSFET N-CH 500V 8A TO-220AB |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Rds On (Max) @ Id, Vgs | 850 mOhm @ 4.8A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
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