(4/5) based on 9 customer reviews
Description
IRF840ALPbF . SiHF840AS-E3. SiHF840ASTL-E3a. SiHF840ASTR-E3a. SiHF840AL-E3. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted). D2PAK (TO-263). I2PAK (TO-262). Lead (Pb)-free. IRF840ASPbF. IRF840ASTRLPbFa. IRF840ASTRRPbFa. IRF840ALPbF . SiHF840AS-E3. SiHF840ASTL-E3a. IRF840ALPBF . 500. 850. 8. 5.1. 25.3. 12. 1. 125. IRF840LCL. 500. 850. 8. 5.1. 26. 12.7. 1. 125. IRF840LCLPBF. 500. 850. 8. 5.1. 26. 12.7. 1. 125. IRF830AL. 500. IRF840ALPBF . 500. 850. 8. 5.1. 25.3. 12. 1. 125. IRF840LCLPBF. 500. 850. 8. 5.1 . 26. 12.7. 1. 125. IRFSL11N50APBF. 500. 550. 11. 7. 34. 15.3. 0.75. 190.
| Part Number | IRF840ALPBF |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Vishay |
| Description | MOSFET N-CH 500V 8A TO-262 |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1018pF @ 25V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 125W (Tc) |
| Rds On (Max) @ Id, Vgs | 850 mOhm @ 4.8A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I2PAK |
| Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
| Image |  |
IRF840ALPBF
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2225
0.15
SUNTOP SEMICONDUCTOR CO., LIMITED
IRF840ALPBF
VISH
54
0.8125
FLOWER GROUP(HK)CO.,LTD
IRF840ALPBF
Vishay / BC Components
178
1.475
Gallop Great Holdings (Hong Kong) Limited
IRF840ALPBF
VISHAY GENERAL
2698
2.1375
CIS Ltd (CHECK IC SOLUTION LIMITED)
IRF840ALPBF
Vishay Siliconix
35800
2.8
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
