(4/5) based on 9 customer reviews
Description
Datasheet Nov 1, 2013 MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Thermal Characteristics. Symbol. Parameter. FQP11N40C . FQPF11N40C. Unit. Jul 14, 2015 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FQP11N40C . TO220-3 (92.5-5-2.5DA_AlBW). FSSZ. Apr 28, 2015 FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. FQP11N40C . FQP11N40C . TO220-3 (92.5-5-. 2.5DA_AlBW).csv. Apr 28, 2015. 1.0.
| Part Number | FQP11N40C |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Vishay |
| Description | MOSFET N-CH 400V 10.5A TO-220 |
| Series | QFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 400V |
| Current - Continuous Drain (Id) @ 25°C | 10.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1090pF @ 25V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 135W (Tc) |
| Rds On (Max) @ Id, Vgs | 530 mOhm @ 5.25A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Image |  |
Hot Offer
FQP11N40C
Vishay Siliconix
100000
4.54
JI Sheng (HK) Electronics Co., Limited
FQP11N40C
Vishay Thin Film
10000
0.87
HONG KONG HORNG SHING LIMITED
FQP11N40C
VISH
9000
1.7875
SUMMER TECH(HK) LIMITED
FQP11N40C
Vishay / BC Components
1000
2.705
RX ELECTRONICS LIMITED
FQP11N40C
VISHAY GENERAL
200000
3.6225
Shenzhen WTX Capacitor Co., Ltd.
