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Description
Dec 1, 2013 FQP8N80C / FQPF8N80C / FQPF8N80CYDTU. N-Channel QFET. . MOSFET . This N-Channel enhancement mode power MOSFET is. 90 ~ 300 VAC. 88%. 89%. 90%. 91%. 92%. 90Vac. 120Vac 140Vac 180Vac 230Vac 265Vac 300Vac. FCPF850N80Z. FCPF1300N80Z. FQPF8N80C . Efficiency Oct 16, 2015 FQPF8N80C . R16. R17. 0.2 . 0.2 . 0 . R11. C5. NS. PC817. PC817. D4. FR107. C1. 220nF. R4. 13.3k . C2. 2.2nF. C3. 22 F. D1. BZT52C18. Aug 5, 2010 Therefore, an N-Channel enhancement-mode MOSFET,. FQPF8N80C (800V, 8A, RDS_ON = 1.55 ), is chosen in consideration of the margins. Nov 13, 2013 Film Res., 5%. 0603. Royalohm 0603J0000T5E. 1. Q1. MOSFET, 8A, 800V. TO- 220. FQPF8N80C . 1. Q2. Transistor, 0.5V, 25V. SOT-23. S8050.
| Part Number | FQPF8N80C |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Vishay |
| Description | MOSFET N-CH 800V 8A TO-220F |
| Series | QFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2050pF @ 25V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 59W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.55 Ohm @ 4A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220F |
| Package / Case | TO-220-3 Full Pack |
| Image |  |
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