Part Number | SIR882DPT1GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 100V 60A PPAK SO-8 |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 58nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1930pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 5.4W (Ta), 83W (Tc) |
Rds On (Max) @ Id, Vgs | 8.7 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image |
SiR882DP-T1-GE3
Vishay Thin Film
8338
1.52
Gallop Great Holdings (Hong Kong) Limited
SIR882DP-T1-GE3
VISH
35800
2.0875
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SIR882DP-T1-GE3
Vishay / BC Components
50000
2.655
Hong Kong Yingweida Electronics Co., Ltd.
SIR882DP-T1-GE3
VISHAY GENERAL
24000
3.2225
Bonase Electronics (HK) Co., Limited
SIR882DP-T1-GE3
Vishay Siliconix
4868000
3.79
Shenzhen WTX Capacitor Co., Ltd.