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Description
Datasheet SPICE Device Model SiR882DP . Vishay Siliconix. DESCRIPTION. The attached SPICE model describes the typical electrical characteristics of the n-channel Document Number: 66562 www.vishay.com. Revision: 05-Mar-10. 1. R-C Thermal Model Parameters. SiR882DP_RC. Vishay Siliconix. DESCRIPTION. Nov 22, 2010 60. 18.3 nC. 0.0094 at VGS = 7.5 V. 60. 0.0115 at VGS = 4.5 V. 60. Ordering Information: SiR882DP -T1-GE3 (Lead (Pb)-free and Halogen-free). On the evaluation board, two SIR882DP (10 m Rdson) in parallel is used as low -side MOSFET. At 5V gate drive voltage and 125oC operating junction SIR882DP -T1-GE3. SOIC. Q6, Q7, Q8, Q9. MOSFET, N-CH, 100V, 28A,. Infineon Technologies. BSZ160N10NS3 G. PG-TSDSON-8. R1, R4. RES 0805, 5.1k, 5%
| Part Number | SIR882DP |
| Brand | Vishay |
| Image |  |
SIR882DP
Vishay Thin Film
5200
0.53
Top Electronics Co.,
SIR882ADP-T1-GE3
VISH
7942
1.1025
Pivot Technology Co., Ltd.
SIR882ADP-T1-GE3
Vishay / BC Components
18000
1.675
MY Group (Asia) Limited
SIR882ADP-T1-GE3
VISHAY GENERAL
50000
2.2475
Yingxinyuan INT'L (Group) Limited
SIR882ADP-T1-GE3
Vishay Siliconix
3220
2.82
HK TWO L ELECTRONIC LIMITED
