Part Number | SIR401DP-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET P-CH 20V 50A PPAK SO-8 |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 310nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 9080pF @ 10V |
Vgs (Max) | ±12V |
FET Feature | - |
Power Dissipation (Max) | 5W (Ta), 39W (Tc) |
Rds On (Max) @ Id, Vgs | 3.2 mOhm @ 15A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | - |
Package / Case | PowerPAK SO-8 |
Image |
SIR401DP-T1-GE3
Vishay Thin Film
21000
0.57
Xinnlinx Electronics Pte
SIR401DP-T1-GE3
VISH
6389
1.5125
CIS Ltd (CHECK IC SOLUTION LIMITED)
SIR401DP-T1-GE3
Vishay / BC Components
900
2.455
MY Group (Asia) Limited
SIR401DP-T1-GE3
VISHAY GENERAL
50000
3.3975
Yingxinyuan INT'L (Group) Limited
SIR401DP-T1-GE3
Vishay Siliconix
53000
4.34
WIN AND WIN ELECTRONICS LIMITED