Part Number | SIR330DP-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 30V 35A PPAK SO-8 |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 5W (Ta), 27.7W (Tc) |
Rds On (Max) @ Id, Vgs | 5.6 mOhm @ 10A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image |
SIR330DP-T1-GE3
Vishay Thin Film
12350
0.76
HK HEQING ELECTRONICS LIMITED
SIR330DP-T1-GE3
VISH
400
2.0275
Gallop Great Holdings (Hong Kong) Limited
SIR330DP-T1-GE3
Vishay / BC Components
35800
3.295
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SIR330DP-T1-GE3
VISHAY GENERAL
289182
4.5625
Cicotex Electronics (HK) Limited
SIR330DP-T1-GE3
Vishay Siliconix
63289
5.83
ATLANTIC TECHNOLOGY LIMITED