Part Number | SIHU6N65E-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 650V 6A IPAK |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 820pF @ 100V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 78W (Tc) |
Rds On (Max) @ Id, Vgs | 600 mOhm @ 3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | IPAK (TO-251) |
Package / Case | TO-251-3 Long Leads, IPak, TO-251AB |
Image |
SIHU6N65E-GE3
Vishay Thin Film
5592
1.89
Dan-Mar Components Inc.
SIHU6N65E-GE3
VISH
391
2.98333333333333
MY Group (Asia) Limited
SIHU6N62E-GE3
Vishay / BC Components
3434
4.07666666666667
Dan-Mar Components Inc.
SIHU6N62E-GE3
VISHAY GENERAL
1664
5.17
MY Group (Asia) Limited