Part Number | SIHU6N62E-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 620V 6A TO-251 |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 620V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 578pF @ 100V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 78W (Tc) |
Rds On (Max) @ Id, Vgs | 900 mOhm @ 3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | IPAK (TO-251) |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
SIHU6N62E-GE3
Vishay Thin Film
2775
1.62
Dan-Mar Components Inc.
SIHU6N62E-GE3
VISH
1000
2.51666666666667
MY Group (Asia) Limited
SIHU6N65E-GE3
Vishay / BC Components
1500
3.41333333333333
Dan-Mar Components Inc.
SIHU6N65E-GE3
VISHAY GENERAL
900
4.31
MY Group (Asia) Limited