Part Number | SIE822DF-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 20V 50A 10-POLARPAK |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 78nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4200pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 5.2W (Ta), 104W (Tc) |
Rds On (Max) @ Id, Vgs | 3.4 mOhm @ 18.3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 10-PolarPAK (S) |
Package / Case | 10-PolarPAK (S) |
Image |
SIE822DF-T1-E3
Vishay Thin Film
5310
1.76
Dedicate Electronics (HK) Limited
SIE822DF-T1-E3
VISH
150000
2.91333333333333
CHIPSMALL LIMITED
SIE822DF-T1-E3
Vishay / BC Components
150000
4.06666666666667
Vast Prospect Electronic Technology Co.,Ltd
SIE822DF-T1-E3CT
VISHAY GENERAL
5310
5.22
Dedicate Electronics (HK) Limited