Part Number | SIE820DF-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 20V 50A 10-POLARPAK |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 143nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4300pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 5.2W (Ta), 104W (Tc) |
Rds On (Max) @ Id, Vgs | 3.5 mOhm @ 18A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 10-PolarPAK (S) |
Package / Case | 10-PolarPAK (S) |
Image |
SIE820DF-T1-E3
Vishay Thin Film
1000
1.49
MY Group (Asia) Limited
SIE820DF-T1-GE3
VISH
18000
2.36
MY Group (Asia) Limited
SIE820DF-T1-E3
Vishay / BC Components
1000
3.23
MY Group (Asia) Limited
SIE820DF-T1-E3
VISHAY GENERAL
23950
4.1
Yu Hong Technologies Limited