Part Number | SIB422EDK-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 20V 9A SC-75-6 |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 13W (Tc) |
Rds On (Max) @ Id, Vgs | 30 mOhm @ 5A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SC-75-6L Single |
Package / Case | PowerPAK SC-75-6L |
Image |
SIB422EDK-T1-GE3
Vishay Thin Film
8200
0.57
HK HEQING ELECTRONICS LIMITED
SIB422EDK-T1-GE3
VISH
9000
1.89
Gallop Great Holdings (Hong Kong) Limited
SiB422EDK-T1-GE3
Vishay / BC Components
35800
3.21
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SIB422EDK-T1-GE3
VISHAY GENERAL
2000
4.53
Yingxinyuan INT'L (Group) Limited
SIB422EDK-T1-GE3
Vishay Siliconix
11200
5.85
CIS Ltd (CHECK IC SOLUTION LIMITED)