Part Number | SIB419DKT1GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET P-CH 12V 9A SC75-6 |
Series | TrenchFET |
Packaging | Digi-Reel |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 11.82nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 562pF @ 6V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.45W (Ta), 13.1W (Tc) |
Rds On (Max) @ Id, Vgs | 60 mOhm @ 5.2A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SC-75-6L Single |
Package / Case | PowerPAK SC-75-6L |
Image |
SIB419DK-T1-GE3
Vishay Thin Film
1000
1.27
MY Group (Asia) Limited
SIB419DK-T1-E3
VISH
16500
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HongKong Wanghua Technology Limited
SIB419DK-T1-E3
Vishay / BC Components
3900
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Hong Kong In Fortune Electronics Co., Limited