Description
DIODE GEN PURP 1.2KV 8A TO252AA Series: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V (1.2kV) Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Speed: Fast Recovery = 200mA (Io) Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -55~C ~ 150~C
Part Number | VS-8EWS12S-M3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Diodes - Rectifiers - Single |
Brand | Vishay |
Description | DIODE GEN PURP 1.2KV 8A TO252AA |
Series | - |
Packaging | Tube |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 1200V (1.2kV) |
Current - Average Rectified (Io) | 8A |
Voltage - Forward (Vf) (Max) @ If | 1.1V @ 8A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 50µA @ 1200V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | D-PAK (TO-252AA) |
Operating Temperature - Junction | -55°C ~ 150°C |
Image |
VS-8EWS12S-M3
Vishay Thin Film
30000
1.19
HK HEQING ELECTRONICS LIMITED
VS-8EWS12S-M3
VISH
100
2.25
Viscre Technology Co., Limited
VS-8EWS12S-M3
Vishay / BC Components
14000
3.31
MY Group (Asia) Limited
VS-8EWS12S-M3
VISHAY GENERAL
32500
4.37
CIS Ltd (CHECK IC SOLUTION LIMITED)
VS-8EWS12S-M3
Vishay Siliconix
90000
5.43
AIC Semiconductor Co., Limited