(4/5) based on 2 customer reviews
Description
MOSFET 4N-CH 30V 0.83A 14DIP Series: - FET Type: 4 N-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25～C: 830mA Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) @ Vgs: - Input Capacitance (Ciss) @ Vds: 110pF @ 15V Power - Max: 2W Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: * Package / Case: - Supplier Device Package: *
| Part Number | VQ1001P-E3 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Vishay |
| Description | MOSFET 4N-CH 30V 0.83A 14DIP |
| Series | - |
| Packaging | Tube |
| FET Type | 4 N-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 830mA |
| Rds On (Max) @ Id, Vgs | 1.75 Ohm @ 200mA, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 110pF @ 15V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | - |
| Supplier Device Package | 14-DIP |
| Image |  |
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