Part Number | SUD35N10-26P-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 100V 35A DPAK |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
Vgs(th) (Max) @ Id | 4.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 47nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 12V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 8.3W (Ta), 83W (Tc) |
Rds On (Max) @ Id, Vgs | 26 mOhm @ 12A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252, (D-Pak) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
SUD35N10-26P-GE3
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HK HEQING ELECTRONICS LIMITED
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Gallop Great Holdings (Hong Kong) Limited
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