Part Number | SQS482EN-T1_GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 30V 16A 1212-8 |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1865pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 62W (Tc) |
Rds On (Max) @ Id, Vgs | 8.5 mOhm @ 16.4A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK 1212-8 |
Package / Case | PowerPAK 1212-8 |
Image |
SQS482EN-T1_GE3
Vishay Thin Film
9000
1.57
Yu Hong Technologies Limited
SQS482EN-T1_GE3
VISH
1000
2.43666666666667
MY Group (Asia) Limited
SQS482EN-T1-GE3
Vishay / BC Components
24256
3.30333333333333
CIS Ltd (CHECK IC SOLUTION LIMITED)
SQS482EN-T1-GE3
VISHAY GENERAL
3080
4.17
ZeYuan Technology Limited