Description
MOSFET 2N-CH 60V 8A Series: TrenchFET? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25~C: 8A Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250米A Gate Charge (Qg) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) @ Vds: 735pF @ 25V Power - Max: 34W Operating Temperature: -55~C ~ 175~C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual
Part Number | SQJ960EP-T1_GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Vishay |
Description | MOSFET 2N-CH 60V 8A |
Series | Automotive, AEC-Q101, TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 8A |
Rds On (Max) @ Id, Vgs | 36 mOhm @ 5.3A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 735pF @ 25V |
Power - Max | 34W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK SO-8 Dual |
Supplier Device Package | PowerPAK SO-8 Dual |
Image |
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