Part Number | SQJ912AEP-T1_GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Vishay |
Description | MOSFET 2N-CH 40V 30A PPAK SO-8 |
Series | Automotive, AEC-Q101, TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 30A |
Rds On (Max) @ Id, Vgs | 9.3 mOhm @ 9.7A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1835pF @ 20V |
Power - Max | 48W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK SO-8 Dual |
Supplier Device Package | PowerPAK SO-8 Dual |
Image |
SQJ912AEP-T1_GE3
Vishay Thin Film
9000
0.71
NorHigh Electronics (HK) Limited
SQJ912AEP-T1_GE3
VISH
100000
1.4075
KYO Inc.
SQJ912AEP-T1_GE3
Vishay / BC Components
55300
2.105
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SQJ912AEP-T1_BE3
VISHAY GENERAL
3000
2.8025
HXY Electronics (HK) Co.,Limited
SQJ912AEP-T1
Vishay Siliconix
11015
3.5
CIS Ltd (CHECK IC SOLUTION LIMITED)