Part Number | SQD35N05-26L-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 55V 30A TO252 |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 1175pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 50W (Tc) |
Rds On (Max) @ Id, Vgs | 20 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252, (D-Pak) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
SQD35N05-26L-GE3
Vishay Thin Film
4046
0.91
HK HEQING ELECTRONICS LIMITED
SQD35N05-26L-GE3
VISH
5617
1.9075
Cicotex Electronics (HK) Limited
SQD35N05-26L-GE3
Vishay / BC Components
5171
2.905
Ande Electronics Co., Limited
SQD35N05-26L-GE3
VISHAY GENERAL
5468
3.9025
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
SQD35N05-26L-GE3
Vishay Siliconix
2127
4.9
Yingxinyuan INT'L (Group) Limited